Datasheets
APT47N60BC3G by:

Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Details for APT47N60BC3G by Microchip Technology Inc

Overview of APT47N60BC3G by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT47N60BC3G

Part # Distributor Description Stock Price Buy
DISTI # 78AH5982
Newark Mosfet Coolmos 600 V 47 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT47N60BC3G RoHS: Compliant Min Qty: 29 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $13.5000
  • 100 $11.6700
  • 250 $11.2300
  • 500 $10.9700
$10.9700 / $13.5000 Buy Now
DISTI # APT47N60BC3G-ND
DigiKey MOSFET N-CH 600V 47A TO247 Min Qty: 1 Lead time: 28 Weeks Container: Tube 1
In Stock
  • 1 $13.5000
$13.5000 Buy Now
DISTI # APT47N60BC3G
TME Transistor: N-MOSFET, unipolar, 600V, 47A, 417W, TO247 Min Qty: 1 0
  • 1 $20.0700
  • 3 $18.0300
$18.0300 / $20.0700 RFQ
NAC FG, MOSFET, 600V, 47A, TO-247, RoHS RoHS: Compliant Min Qty: 28 Package Multiple: 1 Container: Tube 0
  • 1 $12.9000
  • 100 $11.6900
  • 500 $10.9600
  • 1,000 $10.7000
$10.7000 / $12.9000 Buy Now

Part Details for APT47N60BC3G

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APT47N60BC3G Part Data Attributes

APT47N60BC3G Microchip Technology Inc
Buy Now Datasheet
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APT47N60BC3G Microchip Technology Inc Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1800 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 47 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 141 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT47N60BC3G

This table gives cross-reference parts and alternative options found for APT47N60BC3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT47N60BC3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT47N60BCF Power Field-Effect Transistor, 46A I(D), 600V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation APT47N60BC3G vs APT47N60BCF
SPW47N65C3 Power Field-Effect Transistor, 47A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Infineon Technologies AG APT47N60BC3G vs SPW47N65C3
IXKH47N60C Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Littelfuse Inc APT47N60BC3G vs IXKH47N60C
IXKH47N60C Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation APT47N60BC3G vs IXKH47N60C
IXKH47N60C3 Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation APT47N60BC3G vs IXKH47N60C3
Part Number Description Manufacturer Compare
IXKH47N60C Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Littelfuse Inc APT47N60BC3G vs IXKH47N60C
APT47N60BCFG Power Field-Effect Transistor, 46A I(D), 600V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation APT47N60BC3G vs APT47N60BCFG
IXKH47N60C3 Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation APT47N60BC3G vs IXKH47N60C3
APT47N60BCF Power Field-Effect Transistor, 46A I(D), 600V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation APT47N60BC3G vs APT47N60BCF
SPW47N65C3 Power Field-Effect Transistor, 47A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Infineon Technologies AG APT47N60BC3G vs SPW47N65C3
IXKH47N60C Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation APT47N60BC3G vs IXKH47N60C

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