Datasheets
APT43GA90BD30 by:

Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, TO-247

Part Details for APT43GA90BD30 by Microchip Technology Inc

Overview of APT43GA90BD30 by Microchip Technology Inc

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Price & Stock for APT43GA90BD30

Part # Distributor Description Stock Price Buy
DISTI # 78AH5965
Newark Igbt Pt Mos 8 Combi 900 V 43 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT43GA90BD30 Min Qty: 70 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $7.9500
  • 100 $6.8700
  • 250 $6.6100
  • 500 $6.4400
$6.4400 / $7.9500 Buy Now
DISTI # APT43GA90BD30-ND
DigiKey IGBT PT 900V 78A TO247 Min Qty: 1 Lead time: 26 Weeks Container: Tube 80
In Stock
  • 1 $7.9500
  • 100 $6.4375
$6.4375 / $7.9500 Buy Now
DISTI # APT43GA90BD30
Avnet Americas Trans IGBT Chip N-CH 900V 75A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT43GA90BD30) RoHS: Compliant Min Qty: 70 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $7.9500
  • 100 $6.8700
  • 250 $6.6100
  • 500 $6.4400
$6.4400 / $7.9500 Buy Now
DISTI # 494-APT43GA90BD30
Mouser Electronics IGBT Transistors IGBT PT MOS 8 Combi 900 V 43 A TO-247 RoHS: Compliant 0
  • 1 $7.9500
  • 100 $6.8700
$6.8700 / $7.9500 Order Now
DISTI # APT43GA90BD30
Microchip Technology Inc IGBT PT MOS 8 Combi 900 V 43 A TO-247, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $7.9500
  • 100 $6.8700
  • 250 $6.6100
  • 500 $6.4400
  • 1,000 $6.3000
  • 5,000 $6.1000
$6.1000 / $7.9500 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 70 Package Multiple: 1 0
  • 70 $6.8700
$6.8700 Buy Now
Onlinecomponents.com IGBT Transistor - PT Type - 900 V - 78 A - 3.1V Vce(on) (Max) @ 15V Vge, 47A Ic - 337W - 116 nC Gate Charge - TO-247-3 Package - Through Hole. RoHS: Compliant 0
  • 5 $7.8100
  • 25 $7.0500
  • 50 $6.8600
  • 100 $6.6800
  • 250 $6.4200
  • 500 $6.3200
  • 1,000 $6.2300
$6.2300 / $7.8100 Buy Now
DISTI # APT43GA90BD30
TME Transistor: IGBT, PT, 900V, 43A, 337W, TO247-3 Min Qty: 1 0
  • 1 $11.4200
  • 3 $10.3200
  • 10 $9.1200
$9.1200 / $11.4200 RFQ
NAC FG, IGBT-COMBI, 900V, TO-247 RoHS: Compliant Min Qty: 48 Package Multiple: 1 Container: Tube 0
  • 1 $7.5700
  • 100 $6.8700
  • 500 $6.4400
  • 1,000 $6.2800
$6.2800 / $7.5700 Buy Now
DISTI # APT43GA90BD30
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 70 0
  • 70 $6.8900
  • 100 $6.8000
$6.8000 / $6.8900 Buy Now
DISTI # APT43GA90BD30
Avnet Silica Trans IGBT Chip N-CH 900V 75A 3-Pin(3+Tab) TO-247 (Alt: APT43GA90BD30) RoHS: Not Compliant Min Qty: 70 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT43GA90BD30
EBV Elektronik Trans IGBT Chip N-CH 900V 75A 3-Pin(3+Tab) TO-247 (Alt: APT43GA90BD30) RoHS: Not Compliant Min Qty: 70 Package Multiple: 1 Lead time: 44 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics IGBT Transistor - PT Type - 900 V - 78 A - 3.1V Vce(on) (Max) @ 15V Vge, 47A Ic - 337W - 116 nC Gate Charge - TO-247-3 Package - Through Hole. RoHS: Compliant 0
  • 5 $7.8100
  • 25 $7.0500
  • 50 $6.8600
  • 100 $6.6800
  • 250 $6.4200
  • 500 $6.3200
  • 1,000 $6.2300
$6.2300 / $7.8100 Buy Now

Part Details for APT43GA90BD30

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APT43GA90BD30 Part Data Attributes

APT43GA90BD30 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT43GA90BD30 Microchip Technology Inc Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, TO-247
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 43 Weeks
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 78 A
Collector-Emitter Voltage-Max 900 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 246 ns
Turn-on Time-Nom (ton) 28 ns

Alternate Parts for APT43GA90BD30

This table gives cross-reference parts and alternative options found for APT43GA90BD30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT43GA90BD30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT43GA90SD30 Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, ROHS COMPLIANT, D3PAK-3 Microsemi Corporation APT43GA90BD30 vs APT43GA90SD30

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