Part Details for APT40GP90J by Advanced Power Technology
Results Overview of APT40GP90J by Advanced Power Technology
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT40GP90J Information
APT40GP90J by Advanced Power Technology is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT40GP90J
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1485 |
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RFQ |
Part Details for APT40GP90J
APT40GP90J CAD Models
APT40GP90J Part Data Attributes
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APT40GP90J
Advanced Power Technology
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Datasheet
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APT40GP90J
Advanced Power Technology
Insulated Gate Bipolar Transistor, 68A I(C), 900V V(BR)CES, N-Channel, ISOTOP-4
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | ISOTOP-4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 68 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 215 ns | |
Turn-on Time-Nom (ton) | 43 ns |