Part Details for APT40GP60B2DF2 by Advanced Power Technology
Overview of APT40GP60B2DF2 by Advanced Power Technology
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for APT40GP60B2DF2
APT40GP60B2DF2 CAD Models
APT40GP60B2DF2 Part Data Attributes
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APT40GP60B2DF2
Advanced Power Technology
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Datasheet
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APT40GP60B2DF2
Advanced Power Technology
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TMAX-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 158 ns | |
Turn-on Time-Nom (ton) | 49 ns |