Part Details for APT35GP120B2DF2 by Advanced Power Technology
Results Overview of APT35GP120B2DF2 by Advanced Power Technology
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT35GP120B2DF2 Information
APT35GP120B2DF2 by Advanced Power Technology is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for APT35GP120B2DF2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | INSULATED GATE BIPOLAR TRANSISTOR, 96A I(C), 1200V V(BR)CES, N-CHANNEL | 18 |
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$12.3750 / $16.5000 | Buy Now |
Part Details for APT35GP120B2DF2
APT35GP120B2DF2 CAD Models
APT35GP120B2DF2 Part Data Attributes
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APT35GP120B2DF2
Advanced Power Technology
Buy Now
Datasheet
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Compare Parts:
APT35GP120B2DF2
Advanced Power Technology
Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 96 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 220 ns | |
| Turn-on Time-Nom (ton) | 36 ns |