APT35GP120B2DF2
Description: Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3

Overview of APT35GP120B2DF2 by Advanced Power Technology

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for APT35GP120B2DF2 by Advanced Power Technology

Part # Manufacturer Description Stock Price Buy
Quest Components INSULATED GATE BIPOLAR TRANSISTOR, 96A I(C), 1200V V(BR)CES, N-CHANNEL 18
  • 1 $16.5000
  • 4 $12.3750
$12.3750 / $16.5000 Buy Now

CAD Models for APT35GP120B2DF2 by Advanced Power Technology
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Part Data Attributes for APT35GP120B2DF2 by Advanced Power Technology

APT35GP120B2DF2
Advanced Power Technology
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
IN-LINE, R-PSIP-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
96 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
220 ns
Turn-on Time-Nom (ton)
36 ns
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    Advanced Power Technology
    Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3
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