Datasheets
APT30M36B2FLLG by:

Power Field-Effect Transistor, 84A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT30M36B2FLLG by Microchip Technology Inc

Overview of APT30M36B2FLLG by Microchip Technology Inc

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Price & Stock for APT30M36B2FLLG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5857
Newark Fredfet Mos7 300 V 36 Mohm To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT30M36B2FLLG Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $21.4300
  • 100 $18.5100
  • 250 $17.8200
  • 500 $17.4100
$17.4100 / $21.4300 Buy Now
DISTI # APT30M36B2FLLG-ND
DigiKey MOSFET N-CH 300V 84A T-MAX Min Qty: 30 Lead time: 49 Weeks Container: Tube Temporarily Out of Stock
  • 30 $21.4300
$21.4300 Buy Now
DISTI # APT30M36B2FLLG
Avnet Americas Trans MOSFET N-CH 300V 84A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT30M36B2FLLG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $21.4300
  • 100 $18.5100
  • 250 $17.8200
  • 500 $17.4100
$17.4100 / $21.4300 Buy Now
DISTI # 494-APT30M36B2FLLG
Mouser Electronics MOSFET FREDFET MOS7 300 V 36 mOhm TO-247 MAX RoHS: Compliant 0
  • 1 $21.4300
  • 100 $18.5100
$18.5100 / $21.4300 Order Now
DISTI # APT30M36B2FLLG
Microchip Technology Inc FREDFET MOS7 300 V 36 mOhm TO-247 MAX, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $21.4300
  • 100 $18.5100
  • 250 $17.8200
  • 500 $17.4100
  • 1,000 $16.9800
  • 5,000 $16.4300
$16.4300 / $21.4300 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 1 0
  • 30 $18.5600
$18.5600 Buy Now
Onlinecomponents.com   0
  • 1 $20.8000
  • 10 $19.0600
  • 25 $18.5400
  • 50 $18.0400
  • 100 $17.3500
  • 250 $17.0900
  • 500 $16.8300
$16.8300 / $20.8000 Buy Now
DISTI # APT30M36B2FLLG
TME Transistor: N-MOSFET, unipolar, 300V, 84A, Idm: 336A, 568W, TO247MAX Min Qty: 1 0
  • 1 $31.0000
  • 3 $27.9000
  • 10 $24.6500
$24.6500 / $31.0000 RFQ
NAC FG, FREDFET, 300V, TO-247 T-MAX, RoHS RoHS: Compliant Min Qty: 17 Package Multiple: 1 Container: Tube 0
  • 1 $19.8900
  • 100 $18.3200
  • 500 $17.4000
  • 800 $16.9800
$16.9800 / $19.8900 Buy Now
DISTI # APT30M36B2FLLG
EBV Elektronik (Alt: APT30M36B2FLLG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 50 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   0
  • 1 $20.8000
  • 10 $19.0600
  • 25 $18.5400
  • 50 $18.0400
  • 100 $17.3500
  • 250 $17.0900
  • 500 $16.8300
$16.8300 / $20.8000 Buy Now

Part Details for APT30M36B2FLLG

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APT30M36B2FLLG Part Data Attributes:

APT30M36B2FLLG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT30M36B2FLLG Microchip Technology Inc Power Field-Effect Transistor, 84A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TMAX-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 49 Weeks
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 84 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 336 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT30M36B2FLLG

This table gives cross-reference parts and alternative options found for APT30M36B2FLLG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT30M36B2FLLG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT30M36B2LL Power Field-Effect Transistor, 84A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Microsemi Corporation APT30M36B2FLLG vs APT30M36B2LL
APT30M36B2FLLG Power Field-Effect Transistor, 84A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Microsemi Corporation APT30M36B2FLLG vs APT30M36B2FLLG
APT30M36B2LLG Power Field-Effect Transistor, 84A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Microsemi Corporation APT30M36B2FLLG vs APT30M36B2LLG
Part Number Description Manufacturer Compare
IXFT86N30T Power Field-Effect Transistor, Littelfuse Inc APT30M36B2FLLG vs IXFT86N30T
IXFT86N30T Power Field-Effect Transistor, 86A I(D), 300V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation APT30M36B2FLLG vs IXFT86N30T
IXTH88N30P Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXYS Corporation APT30M36B2FLLG vs IXTH88N30P
IXFK88N30P Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Littelfuse Inc APT30M36B2FLLG vs IXFK88N30P
IXTH88N30P Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Littelfuse Inc APT30M36B2FLLG vs IXTH88N30P
IXFT88N30P Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc APT30M36B2FLLG vs IXFT88N30P
IXTQ88N30P Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Littelfuse Inc APT30M36B2FLLG vs IXTQ88N30P
IXTK88N30P Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN IXYS Corporation APT30M36B2FLLG vs IXTK88N30P
IXTQ88N30P Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXYS Corporation APT30M36B2FLLG vs IXTQ88N30P
IXFH88N30P Power Field-Effect Transistor, 88A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN IXYS Corporation APT30M36B2FLLG vs IXFH88N30P

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