Datasheets
APT25GP120BDQ1G by:

Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, TO-247

Part Details for APT25GP120BDQ1G by Microchip Technology Inc

Overview of APT25GP120BDQ1G by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT25GP120BDQ1G

Part # Distributor Description Stock Price Buy
DISTI # 78AH5791
Newark Igbt Pt Mos 7 Combi 1200 V 25 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT25GP120BDQ1G RoHS: Compliant Min Qty: 34 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $11.5900
  • 100 $10.0100
  • 250 $9.6400
  • 500 $9.4100
$9.4100 / $11.5900 Buy Now
DISTI # APT25GP120BDQ1G-ND
DigiKey IGBT PT 1200V 69A TO247 Min Qty: 50 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 50 $11.5900
$11.5900 Buy Now
DISTI # APT25GP120BDQ1G
Avnet Americas Transistor I GBT N-CH 1200V 69A 3-Pin TO-247 Tube - Rail/Tube (Alt: APT25GP120BDQ1G) RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 1 $11.5900
$11.5900 Buy Now
DISTI # 494-APT25GP120BDQ1G
Mouser Electronics IGBTs IGBT PT MOS 7 Combi 1200 V 25 A TO-247 RoHS: Compliant 0
  • 1 $11.5900
  • 500 $10.0100
$10.0100 / $11.5900 Order Now
DISTI # APT25GP120BDQ1G
Microchip Technology Inc IGBT PT MOS 7 Combi 1200 V 25 A TO-247, Projected EOL: 2049-03-25 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $11.5900
  • 100 $10.0100
  • 250 $9.6400
  • 500 $9.4100
  • 1,000 $9.1900
  • 5,000 $8.8800
$8.8800 / $11.5900 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 0
  • 50 $10.0300
$10.0300 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 5 $11.2200
  • 25 $10.1600
  • 50 $9.8900
  • 100 $9.5200
  • 250 $9.2800
  • 500 $9.1400
  • 1,000 $9.0100
$9.0100 / $11.2200 Buy Now
DISTI # APT25GP120BDQ1G
TME Transistor: IGBT, PT, 1.2kV, 33A, 417W, TO247-3 Min Qty: 1 0
  • 1 $14.5000
  • 3 $13.5000
  • 10 $12.9000
$12.9000 / $14.5000 RFQ
NAC UNRLS, FG, IGBT, 1200V, TO-247, RoHS RoHS: Compliant Min Qty: 33 Package Multiple: 1 Container: Tube 0
  • 1 $11.0600
  • 100 $10.0300
  • 500 $9.4000
  • 1,000 $9.1700
$9.1700 / $11.0600 Buy Now
DISTI # APT25GP120BDQ1G
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 50 0
  • 50 $10.0600
  • 100 $9.9300
$9.9300 / $10.0600 Buy Now
DISTI # APT25GP120BDQ1G
Avnet Silica Transistor I GBT N-CH 1200V 69A 3-Pin TO-247 Tube (Alt: APT25GP120BDQ1G) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT25GP120BDQ1G
EBV Elektronik Transistor I GBT N-CH 1200V 69A 3-Pin TO-247 Tube (Alt: APT25GP120BDQ1G) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 0
  • 5 $11.2200
  • 25 $10.1600
  • 50 $9.8900
  • 100 $9.5200
  • 250 $9.2800
  • 500 $9.1400
  • 1,000 $9.0100
$9.0100 / $11.2200 Buy Now

Part Details for APT25GP120BDQ1G

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APT25GP120BDQ1G Part Data Attributes

APT25GP120BDQ1G Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT25GP120BDQ1G Microchip Technology Inc Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, TO-247
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 69 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 417 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 200 ns
Turn-on Time-Nom (ton) 26 ns

Alternate Parts for APT25GP120BDQ1G

This table gives cross-reference parts and alternative options found for APT25GP120BDQ1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT25GP120BDQ1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT25GP120BDQ1 Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Microsemi Corporation APT25GP120BDQ1G vs APT25GP120BDQ1
APT25GP120BDF1 Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel Microsemi Corporation APT25GP120BDQ1G vs APT25GP120BDF1

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