We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / IGBTs / APT15GP60BDQ1G
Datasheets
APT15GP60BDQ1G by:
Microsemi Corporation
Microchip Technology Inc
Microsemi Corporation
Not Found

Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

Part Details for APT15GP60BDQ1G by Microsemi Corporation

Results Overview of APT15GP60BDQ1G by Microsemi Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

APT15GP60BDQ1G Information

APT15GP60BDQ1G by Microsemi Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT15GP60BDQ1G

Part # Distributor Description Stock Price Buy
Quest Components   26
  • 1 $9.9360
  • 4 $7.2864
  • 11 $6.6240
$6.6240 / $9.9360 Buy Now
ComSIT USA 600 V POWER MOS 7 IGBT Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247... AD more RoHS: Compliant ECCN: EAR99 Stock DE - 3446
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for APT15GP60BDQ1G

APT15GP60BDQ1G CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

APT15GP60BDQ1G Part Data Attributes

Parametric Data
APT15GP60BDQ1G Microsemi Corporation
Buy Now Datasheet
Compare Parts:
APT15GP60BDQ1G Microsemi Corporation Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Part Package Code TO-247AD
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Microsemi Corporation
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 56 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 160 ns
Turn-on Time-Nom (ton) 20 ns

Alternate Parts for APT15GP60BDQ1G

This table gives cross-reference parts and alternative options found for APT15GP60BDQ1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT15GP60BDQ1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT15GP60BDF1 Advanced Power Technology Check for Price Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN APT15GP60BDQ1G vs APT15GP60BDF1
APT15GP60KG Microsemi Corporation Check for Price Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN APT15GP60BDQ1G vs APT15GP60KG
APT15GP60BSC Advanced Power Technology Check for Price Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN APT15GP60BDQ1G vs APT15GP60BSC
APT15GP60BDQ1 Microsemi Corporation Check for Price Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN APT15GP60BDQ1G vs APT15GP60BDQ1
APT15GP60BSC Microsemi Corporation Check for Price Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel APT15GP60BDQ1G vs APT15GP60BSC
APT15GP60BDLG Microsemi Corporation Check for Price Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN APT15GP60BDQ1G vs APT15GP60BDLG

APT15GP60BDQ1G Related Parts

APT15GP60BDQ1G Frequently Asked Questions (FAQ)

  • Microsemi recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.

  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and consider using a heat sink or thermal interface material. Also, derate the device's power handling according to the temperature derating curve in the datasheet.

  • The maximum allowable voltage transient on the drain-source pins is 100V for a duration of less than 10ns. Exceeding this may cause damage to the device.

  • Yes, the APT15GP60BDQ1G is suitable for switching power supply applications due to its low RDS(on) and high current handling capabilities. However, ensure proper design and layout to minimize switching losses and electromagnetic interference (EMI).

  • Handle the device with ESD-safe materials, use an ESD wrist strap or mat, and ensure the PCB has ESD protection components such as TVS diodes or resistors. Also, follow proper soldering and assembly procedures to prevent ESD damage.