Datasheets
APT13F120S by:
Microchip Technology Inc
Microchip Technology Inc
Microsemi Corporation
Not Found

Power Field-Effect Transistor, 14A I(D), 1200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT13F120S by Microchip Technology Inc

Results Overview of APT13F120S by Microchip Technology Inc

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Applications Industrial Automation Electronic Manufacturing

APT13F120S Information

APT13F120S by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT13F120S

Part # Distributor Description Stock Price Buy
DISTI # 78AH5617
Newark Fredfet Mos8 1200 V 13 A To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT13F120S RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $10.6200
  • 100 $9.1700
  • 250 $8.8300
  • 500 $8.6200
$8.6200 / $10.6200 Buy Now
DISTI # APT13F120S-ND
DigiKey MOSFET N-CH 1200V 14A D3PAK Min Qty: 50 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 50 $10.6200
$10.6200 Buy Now
DISTI # APT13F120S
Avnet Americas Trans MOSFET N-CH 1200V 14A 3-Pin D3PAK - Rail/Tube (Alt: APT13F120S) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 50 $8.6871
  • 60 $8.5491
  • 110 $8.4111
  • 250 $8.2731
  • 500 $8.1351
$8.1351 / $8.6871 Buy Now
DISTI # 494-APT13F120S
Mouser Electronics MOSFETs FREDFET MOS8 1200 V 13 A TO-268 RoHS: Compliant 0
  • 1 $10.6200
  • 100 $9.1700
$9.1700 / $10.6200 Order Now
DISTI # APT13F120S
Microchip Technology Inc FREDFET MOS 8 1200 V 13 A TO-268, TO-268, Projected EOL: 2044-04-30 RoHS: Compliant Lead time: 28 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $10.6200
  • 100 $9.1700
  • 250 $8.8300
  • 500 $8.6200
  • 1,000 $8.4200
  • 5,000 $8.1400
$8.1400 / $10.6200 Buy Now
Future Electronics Trans MOSFET N-CH Si 1.2KV 14A 3-Pin(2+Tab) D3PAK RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 0
  • 50 $9.3900
  • 100 $9.3400
  • 150 $9.3100
  • 250 $9.2800
  • 400 $9.2000
$9.2000 / $9.3900 Buy Now
Onlinecomponents.com   RoHS: Compliant 1883 Factory Stock
  • 5 $10.3000
  • 25 $9.3200
  • 50 $9.0800
  • 100 $8.8500
  • 250 $8.5200
  • 500 $8.3900
  • 1,000 $8.2600
$8.2600 / $10.3000 Buy Now
DISTI # APT13F120S
TME Transistor: N-MOSFET, unipolar, 1.2kV, 9A, Idm: 50A, 625W, D3PAK Min Qty: 1 0
  • 1 $21.9200
  • 3 $19.5300
  • 10 $17.3500
$17.3500 / $21.9200 RFQ
NAC FG, FREDFET, 1200V, TO-268 RoHS: Compliant Min Qty: 32 Package Multiple: 1 Container: Tube 0
  • 1 $10.1500
  • 100 $9.2000
  • 500 $8.6300
  • 1,000 $8.4100
$8.4100 / $10.1500 Buy Now
DISTI # APT13F120S
Avnet Silica Trans MOSFET NCH 1200V 14A 3Pin D3PAK (Alt: APT13F120S) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT13F120S
EBV Elektronik Trans MOSFET NCH 1200V 14A 3Pin D3PAK (Alt: APT13F120S) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 1883 Factory Stock
  • 5 $10.3000
  • 25 $9.3200
  • 50 $9.0800
  • 100 $8.8500
  • 250 $8.5200
  • 500 $8.3900
  • 1,000 $8.2600
$8.2600 / $10.3000 Buy Now

Part Details for APT13F120S

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APT13F120S Part Data Attributes

APT13F120S Microchip Technology Inc
Buy Now Datasheet
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APT13F120S Microchip Technology Inc Power Field-Effect Transistor, 14A I(D), 1200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description D3PAK-3/2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 1070 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 55 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 625 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN SILVER COPPER
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

APT13F120S Related Parts

APT13F120S Frequently Asked Questions (FAQ)

  • Microchip recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.

  • To ensure reliable operation at high temperatures, it's essential to follow proper thermal design and layout guidelines. Additionally, consider using a thermal interface material (TIM) between the device and the heat sink, and ensure the device is operated within its specified temperature range (–40°C to +150°C).

  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage within the specified range of 4.5V to 5.5V.

  • The APT13F120S has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.

  • The recommended power-up sequence is to apply the input voltage (VIN) first, followed by the enable signal (EN). This ensures that the device is properly biased and configured before enabling the output.