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Power Bipolar Transistor
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Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | TRANS NPN 450V 3.2A TO251 | 21000 |
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RFQ |
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APT13005SI-G1
Diodes Incorporated
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Datasheet
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APT13005SI-G1
Diodes Incorporated
Power Bipolar Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Diodes Incorporated | |
Collector Current-Max (IC) | 3.2 A | |
Collector-Emitter Voltage-Max | 450 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 11 | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz |