Datasheets
APT13003HU-G1 by:

Power Bipolar Transistor, 1.5A I(C), NPN

Part Details for APT13003HU-G1 by Diodes Incorporated

Overview of APT13003HU-G1 by Diodes Incorporated

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Applications Consumer Electronics Industrial Automation Audio and Video Systems Renewable Energy

Price & Stock for APT13003HU-G1

Part # Distributor Description Stock Price Buy
Bristol Electronics   6000
RFQ

Part Details for APT13003HU-G1

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APT13003HU-G1 Part Data Attributes

APT13003HU-G1 Diodes Incorporated
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APT13003HU-G1 Diodes Incorporated Power Bipolar Transistor, 1.5A I(C), NPN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer DIODES INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Diodes Incorporated
Collector Current-Max (IC) 1.5 A
Collector-Emitter Voltage-Max 465 V
Configuration SINGLE
DC Current Gain-Min (hFE) 5
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz

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