Datasheets
APT1201R4SFLLG by:
Microchip Technology Inc
Microchip Technology Inc
Microsemi Corporation
Not Found

Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT1201R4SFLLG by Microchip Technology Inc

Results Overview of APT1201R4SFLLG by Microchip Technology Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

APT1201R4SFLLG Information

APT1201R4SFLLG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT1201R4SFLLG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5595
Newark Fredfet Mos7 1200 V 1.4 Ohm To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT1201R4SFLLG RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $24.3800
  • 100 $21.0600
  • 250 $20.2700
  • 500 $19.8000
$19.8000 / $24.3800 Buy Now
DISTI # APT1201R4SFLLG-ND
DigiKey MOSFET N-CH 1200V 9A D3PAK Min Qty: 30 Lead time: 26 Weeks Container: Tube Temporarily Out of Stock
  • 30 $24.3800
$24.3800 Buy Now
DISTI # APT1201R4SFLLG
Avnet Americas Trans MOSFET N-CH 1.2KV 9A 3-Pin(2+Tab) D3PAK - Rail/Tube (Alt: APT1201R4SFLLG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Tube 0
  • 30 $19.8125
  • 40 $19.4933
  • 70 $19.1773
  • 150 $18.8601
  • 300 $18.5445
$18.5445 / $19.8125 Buy Now
DISTI # 494-APT1201R4SFLLG
Mouser Electronics MOSFETs FREDFET MOS7 1200 V 1.4 Ohm TO-268 RoHS: Compliant 0
  • 1 $24.3800
  • 100 $21.0600
$21.0600 / $24.3800 Order Now
DISTI # APT1201R4SFLLG
Microchip Technology Inc FREDFET MOS 7 1200 V 1.4 Ohm TO-268, TO-268, Projected EOL: 2044-04-30 COO: PHL ECCN: EAR99 RoHS: Compliant Lead time: 26 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $24.3800
  • 100 $21.0600
  • 250 $20.2700
  • 500 $19.8000
  • 1,000 $19.3300
  • 5,000 $18.6900
$18.6900 / $24.3800 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 1.2KV 9A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant 0
  • 1 $23.3100
  • 10 $21.4200
  • 25 $20.8600
  • 50 $20.0600
  • 100 $19.5700
  • 250 $19.2700
  • 500 $18.9900
$18.9900 / $23.3100 Buy Now
DISTI # APT1201R4SFLLG
TME Transistor: N-MOSFET, unipolar, 1.2kV, 9A, Idm: 36A, 300W, D3PAK Min Qty: 1 0
  • 1 $35.3100
  • 3 $31.7800
  • 10 $28.0800
$28.0800 / $35.3100 RFQ
NAC FG, FREDFET,1200V, TO-268, RoHS RoHS: Compliant Min Qty: 15 Package Multiple: 1 Container: Tube 0
  • 1 $22.6400
  • 100 $20.8600
  • 500 $19.8100
  • 800 $19.3300
$19.3300 / $22.6400 Buy Now
DISTI # APT1201R4SFLLG
Richardson RFPD POWER FREDFET TRANSISTOR RoHS: Compliant Min Qty: 30 0
  • 30 $21.7600
  • 50 $21.2000
  • 100 $20.9300
$20.9300 / $21.7600 Buy Now
Master Electronics Trans MOSFET N-CH 1.2KV 9A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant 0
  • 1 $23.3100
  • 10 $21.4200
  • 25 $20.8600
  • 50 $20.0600
  • 100 $19.5700
  • 250 $19.2700
  • 500 $18.9900
$18.9900 / $23.3100 Buy Now

Part Details for APT1201R4SFLLG

APT1201R4SFLLG CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

APT1201R4SFLLG Part Data Attributes

APT1201R4SFLLG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT1201R4SFLLG Microchip Technology Inc Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Avalanche Energy Rating (Eas) 1210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT1201R4SFLLG

This table gives cross-reference parts and alternative options found for APT1201R4SFLLG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1201R4SFLLG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT1201R4SFLL Microsemi Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK, 3 PIN APT1201R4SFLLG vs APT1201R4SFLL
APT1201R4SLL Advanced Power Technology Check for Price Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1201R4SFLLG vs APT1201R4SLL
APT1201R4SFLLG Microsemi Corporation Check for Price Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1201R4SFLLG vs APT1201R4SFLLG
APT1201R4BLL Advanced Power Technology Check for Price Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 APT1201R4SFLLG vs APT1201R4BLL

APT1201R4SFLLG Related Parts

APT1201R4SFLLG Frequently Asked Questions (FAQ)

  • Microchip provides a recommended PCB layout in the APT1201R4SFLLG evaluation board user's guide. It's essential to follow the layout guidelines to minimize noise, ensure proper thermal management, and optimize performance.

  • The input capacitor values depend on the input voltage, output voltage, and desired ripple current. Microchip provides a capacitor selection guide in the datasheet, but it's recommended to consult with a capacitor manufacturer or use online capacitor selection tools for optimal results.

  • While the datasheet specifies an operating temperature range of -40°C to 125°C, it's recommended to derate the device's performance and reliability above 85°C. For reliable operation, it's best to keep the ambient temperature below 80°C.

  • To ensure EMC compliance, follow proper PCB layout and design guidelines, use shielding and filtering components, and consider using a metal shield or enclosure. Microchip provides EMC design guidelines in the datasheet and application notes.

  • The recommended output capacitor type is a low-ESR ceramic or polymer capacitor. The value depends on the output voltage, output current, and desired ripple voltage. A general guideline is to use a 10-22μF capacitor with an ESR of 10-50mΩ.