Part Details for APT11GF120BRD by Advanced Power Technology
Results Overview of APT11GF120BRD by Advanced Power Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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APT11GF120BRD Information
APT11GF120BRD by Advanced Power Technology is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT11GF120BRD
APT11GF120BRD CAD Models
APT11GF120BRD Part Data Attributes
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APT11GF120BRD
Advanced Power Technology
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Datasheet
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APT11GF120BRD
Advanced Power Technology
Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | FAST SWITCHING | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 22 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 215 ns | |
| Turn-on Time-Nom (ton) | 33 ns |
Alternate Parts for APT11GF120BRD
This table gives cross-reference parts and alternative options found for APT11GF120BRD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT11GF120BRD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SGP13N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | APT11GF120BRD vs SGP13N60UF |
| STGW12NB60HD | STMicroelectronics | Check for Price | 24A, 600V, N-CHANNEL IGBT, TO-247, TO-247, 3 PIN | APT11GF120BRD vs STGW12NB60HD |
| HGTG11N120CND_NL | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 | APT11GF120BRD vs HGTG11N120CND_NL |
| IXSH16N60U1 | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | APT11GF120BRD vs IXSH16N60U1 |
| HGTG40N60B3_NL | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | APT11GF120BRD vs HGTG40N60B3_NL |
| APT15GT60BRG | Microchip Technology Inc | Check for Price | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-247 | APT11GF120BRD vs APT15GT60BRG |
| IRG4PH30KPBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | APT11GF120BRD vs IRG4PH30KPBF |
| IRG4BC20KDPBF | Infineon Technologies AG | $1.4350 | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | APT11GF120BRD vs IRG4BC20KDPBF |
| SGW6N60UF | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | APT11GF120BRD vs SGW6N60UF |
| IRG4BC20K-S | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | APT11GF120BRD vs IRG4BC20K-S |