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Overview of APT11GF120BRD by Advanced Power Technology
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for APT11GF120BRD by Advanced Power Technology
Part Data Attributes for APT11GF120BRD by Advanced Power Technology
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
ADVANCED POWER TECHNOLOGY INC
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Additional Feature
|
FAST SWITCHING
|
Case Connection
|
COLLECTOR
|
Collector Current-Max (IC)
|
22 A
|
Collector-Emitter Voltage-Max
|
1200 V
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
Gate-Emitter Thr Voltage-Max
|
6.5 V
|
Gate-Emitter Voltage-Max
|
20 V
|
JEDEC-95 Code
|
TO-247
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
125 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
POWER CONTROL
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Nom (toff)
|
215 ns
|
Turn-on Time-Nom (ton)
|
33 ns
|
Alternate Parts for APT11GF120BRD
This table gives cross-reference parts and alternative options found for APT11GF120BRD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT11GF120BRD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRGBC40U | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | APT11GF120BRD vs IRGBC40U |
APT35GN120SG | Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | APT11GF120BRD vs APT35GN120SG |
IXGH38N60 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | APT11GF120BRD vs IXGH38N60 |
HGTG40N60B3 | 600V, PT IGBT, 450-TUBE | onsemi | APT11GF120BRD vs HGTG40N60B3 |
STGW20NB60KD | 40A, 600V, N-CHANNEL IGBT, TO-247AC, TO-247, 3 PIN | STMicroelectronics | APT11GF120BRD vs STGW20NB60KD |
IXGH36N60A3 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | APT11GF120BRD vs IXGH36N60A3 |
IRG4PC40UD-E | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Infineon Technologies AG | APT11GF120BRD vs IRG4PC40UD-E |
APT75GL60BN | 75A, 600V, N-CHANNEL IGBT, TO-247 | Microsemi Corporation | APT11GF120BRD vs APT75GL60BN |
IRGBC40F | Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | APT11GF120BRD vs IRGBC40F |
IGP20N65H5XKSA1 | Insulated Gate Bipolar Transistor, 42A I(C), 650V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | APT11GF120BRD vs IGP20N65H5XKSA1 |