Datasheets
APT1101R2BFLL by:
Advanced Power Technology
Advanced Power Technology
Microsemi Corporation
Not Found

Power Field-Effect Transistor, 10A I(D), 1100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

Part Details for APT1101R2BFLL by Advanced Power Technology

Results Overview of APT1101R2BFLL by Advanced Power Technology

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

APT1101R2BFLL Information

APT1101R2BFLL by Advanced Power Technology is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for APT1101R2BFLL

APT1101R2BFLL CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

APT1101R2BFLL Part Data Attributes

APT1101R2BFLL Advanced Power Technology
Buy Now Datasheet
Compare Parts:
APT1101R2BFLL Advanced Power Technology Power Field-Effect Transistor, 10A I(D), 1100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Select a part to compare:
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 1210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1100 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 298 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT1101R2BFLL

This table gives cross-reference parts and alternative options found for APT1101R2BFLL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1101R2BFLL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT1001R1AVR Advanced Power Technology Check for Price Power Field-Effect Transistor, 9A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN APT1101R2BFLL vs APT1001R1AVR
IXFT10N100Q IXYS Corporation Check for Price Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN APT1101R2BFLL vs IXFT10N100Q
SFF10N100/3 Solid State Devices Inc (SSDI) Check for Price Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, APT1101R2BFLL vs SFF10N100/3