Part Details for APT100GT120JRDQ4 by Microchip Technology Inc
Overview of APT100GT120JRDQ4 by Microchip Technology Inc
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for APT100GT120JRDQ4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
78AH5536
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Newark | Igbt Npt Medium Frequency Combi 1200 V 100 A Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT100GT120JRDQ4 RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$50.1800 / $61.8200 | Buy Now |
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DISTI #
APT100GT120JRDQ4-ND
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DigiKey | IGBT MOD 1200V 123A 570W ISOTOP Min Qty: 1 Lead time: 28 Weeks Container: Tube |
20 In Stock |
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$50.1750 / $61.8200 | Buy Now |
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DISTI #
APT100GT120JRDQ4
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Avnet Americas | Trans IGBT Chip N-CH 1.2KV 123A 4-Pin SOT-227 - Rail/Tube (Alt: APT100GT120JRDQ4) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 28 Weeks, 0 Days Container: Tube | 0 |
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$50.1800 / $61.8200 | Buy Now |
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DISTI #
494-APT100GT120JRDQ4
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Mouser Electronics | IGBT Modules IGBT NPT Medium Frequency Combi 1200 V 100 A SOT-227 RoHS: Compliant | 6 |
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$61.8200 | Buy Now |
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DISTI #
APT100GT120JRDQ4
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Microchip Technology Inc | IGBT NPT Medium Frequency Combi 1200 V 100 A SOT-227, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$47.3600 / $61.8200 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 1 | 0 |
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$53.5200 | Buy Now |
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Onlinecomponents.com | IGBT Module - NPT - Single Configuration - 1200 V - 123 A - 570 W - 3.7V Vce(on) (Max) @ 15V Vge, 100A Ic - ISOTOP Package - Chassis Mount. RoHS: Compliant | 0 |
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$48.8100 / $59.0300 | Buy Now |
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DISTI #
APT100GT120JRDQ4
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TME | Module: IGBT, single transistor, Urmax: 1.2kV, Ic: 67A, SOT227B Min Qty: 1 | 0 |
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$71.0600 / $89.3600 | RFQ |
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NAC | FG, IGBT-COMBI,1200V,100A, SOT-227 RoHS: Compliant Min Qty: 6 Package Multiple: 1 Container: Tube | 0 |
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$48.9500 / $57.3400 | Buy Now |
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DISTI #
APT100GT120JRDQ
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 10 | 0 |
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$53.0000 / $55.1300 | Buy Now |
Part Details for APT100GT120JRDQ4
APT100GT120JRDQ4 CAD Models
APT100GT120JRDQ4 Part Data Attributes
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APT100GT120JRDQ4
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
APT100GT120JRDQ4
Microchip Technology Inc
Insulated Gate Bipolar Transistor, 123A I(C), 1200V V(BR)CES, N-Channel
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 123 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 570 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 747 ns | |
| Turn-on Time-Nom (ton) | 150 ns | |
| VCEsat-Max | 3.7 V |
Alternate Parts for APT100GT120JRDQ4
This table gives cross-reference parts and alternative options found for APT100GT120JRDQ4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT100GT120JRDQ4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT100GT120JRDL | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 123A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4 | APT100GT120JRDQ4 vs APT100GT120JRDL |
| APT100GT120JRDLG | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 123A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4 | APT100GT120JRDQ4 vs APT100GT120JRDLG |
| IXEN60N120D1 | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4 | APT100GT120JRDQ4 vs IXEN60N120D1 |