Datasheets
APT10057WVR by:
Advanced Power Technology
Advanced Power Technology
Microsemi Corporation
Not Found

Power Field-Effect Transistor, 17.3A I(D), 1000V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, TO-267, 3 PIN

Part Details for APT10057WVR by Advanced Power Technology

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APT10057WVR Information

APT10057WVR by Advanced Power Technology is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for APT10057WVR

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APT10057WVR Part Data Attributes

APT10057WVR Advanced Power Technology
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APT10057WVR Advanced Power Technology Power Field-Effect Transistor, 17.3A I(D), 1000V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, TO-267, 3 PIN
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 17.3 A
Drain-source On Resistance-Max 0.57 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-267AA
JESD-30 Code R-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 450 W
Pulsed Drain Current-Max (IDM) 69.2 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON