Datasheets
APT10050B2VR by:

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3

Part Details for APT10050B2VR by Advanced Power Technology

Overview of APT10050B2VR by Advanced Power Technology

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for APT10050B2VR

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APT10050B2VR Part Data Attributes:

APT10050B2VR Advanced Power Technology
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APT10050B2VR Advanced Power Technology Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH VOLTAGE
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 520 W
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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