Datasheets
APT10050B2VFRG by:

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT10050B2VFRG by Microchip Technology Inc

Overview of APT10050B2VFRG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT10050B2VFRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5572
Newark Fredfet Mos5 1000 V 50 Ohm To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT10050B2VFRG Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $25.4800
  • 100 $22.0100
  • 250 $21.1700
  • 500 $20.6600
$20.6600 / $25.4800 Buy Now
DISTI # APT10050B2VFRG-ND
DigiKey MOSFET N-CH 1000V 21A T-MAX Min Qty: 30 Lead time: 32 Weeks Container: Tube Temporarily Out of Stock
  • 30 $25.4800
$25.4800 Buy Now
DISTI # APT10050B2VFRG
Avnet Americas Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT10050B2VFRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $25.4800
  • 100 $22.0100
  • 250 $21.1700
  • 500 $20.6600
$20.6600 / $25.4800 Buy Now
DISTI # 494-APT10050B2VFRG
Mouser Electronics MOSFET FREDFET MOS5 1000 V 50 Ohm TO-247 MAX RoHS: Compliant 16
  • 1 $25.4800
  • 100 $22.0100
$22.0100 / $25.4800 Buy Now
DISTI # APT10050B2VFRG
Microchip Technology Inc FREDFET MOS5 1000 V 500 mOhm TO-247 MAX, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $25.4800
  • 100 $22.0100
  • 250 $21.1700
  • 500 $20.6600
  • 1,000 $20.1700
  • 5,000 $19.5100
$19.5100 / $25.4800 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 1 0
  • 30 $22.0600
$22.0600 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) T-MAX Tube RoHS: Compliant 6 Factory Stock
  • 1 $24.7100
  • 5 $23.6300
  • 25 $22.0200
  • 50 $21.1600
  • 100 $20.6100
  • 250 $20.3000
  • 500 $20.0000
$20.0000 / $24.7100 Buy Now
DISTI # APT10050B2VFRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 1kV, 21A, Idm: 84A Min Qty: 1 0
  • 1 $47.1300
  • 3 $42.8200
  • 10 $37.3800
$37.3800 / $47.1300 RFQ
NAC FG, FREDFET, 1000V, TO-247 T-MAX, RoHS RoHS: Compliant Min Qty: 15 Package Multiple: 1 Container: Tube 0
  • 1 $23.6300
  • 100 $21.7600
  • 500 $20.6700
  • 800 $20.1700
$20.1700 / $23.6300 Buy Now
DISTI # APT10050B2VFRG
Avnet Silica Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) T-MAX (Alt: APT10050B2VFRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT10050B2VFRG
EBV Elektronik Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) T-MAX (Alt: APT10050B2VFRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 50 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) T-MAX Tube RoHS: Compliant 6 Factory Stock
  • 1 $24.7100
  • 5 $23.6300
  • 25 $22.0200
  • 50 $21.1600
  • 100 $20.6100
  • 250 $20.3000
  • 500 $20.0000
$20.0000 / $24.7100 Buy Now

Part Details for APT10050B2VFRG

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APT10050B2VFRG Part Data Attributes

APT10050B2VFRG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT10050B2VFRG Microchip Technology Inc Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TMAX-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 49 Weeks
Samacsys Manufacturer Microchip
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT10050B2VFRG

This table gives cross-reference parts and alternative options found for APT10050B2VFRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT10050B2VFRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT10050B2LC 21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3 Microsemi Corporation APT10050B2VFRG vs APT10050B2LC
APT10050B2LC Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Advanced Power Technology APT10050B2VFRG vs APT10050B2LC
APT10050B2VR Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3 Microsemi Corporation APT10050B2VFRG vs APT10050B2VR
APT10050B2VFRG Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Microsemi Corporation APT10050B2VFRG vs APT10050B2VFRG
Part Number Description Manufacturer Compare
APT10050B2LC Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Advanced Power Technology APT10050B2VFRG vs APT10050B2LC
IXFK21N100F Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN IXYS Corporation APT10050B2VFRG vs IXFK21N100F
APT10050LVRG Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc APT10050B2VFRG vs APT10050LVRG
IXFX21N100F Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation APT10050B2VFRG vs IXFX21N100F
APT10050LLC Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Advanced Power Technology APT10050B2VFRG vs APT10050LLC
APT10050LVR Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation APT10050B2VFRG vs APT10050LVR
APT10050LVFRG Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc APT10050B2VFRG vs APT10050LVFRG
IXFX21N100F Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Littelfuse Inc APT10050B2VFRG vs IXFX21N100F
APT10050B2VR Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3 Microsemi Corporation APT10050B2VFRG vs APT10050B2VR
IXFK21N100Q Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 Littelfuse Inc APT10050B2VFRG vs IXFK21N100Q

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