Datasheets
APT1003RSFLLG by:

Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT1003RSFLLG by Microchip Technology Inc

Overview of APT1003RSFLLG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT1003RSFLLG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5558
Newark Fredfet Mos7 1000 V 3 Ohm To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT1003RSFLLG Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $11.9700
  • 100 $10.3500
  • 250 $9.9400
  • 500 $9.7200
$9.7200 / $11.9700 Buy Now
DISTI # APT1003RSFLLG-ND
DigiKey MOSFET N-CH 1000V 4A D3PAK Min Qty: 50 Lead time: 49 Weeks Container: Tube Temporarily Out of Stock
  • 50 $11.9700
$11.9700 Buy Now
DISTI # APT1003RSFLLG
Avnet Americas Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D3PAK - Rail/Tube (Alt: APT1003RSFLLG) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $11.9700
  • 100 $10.3500
  • 100 $10.3500
  • 500 $9.7200
$9.7200 / $11.9700 Buy Now
DISTI # APT1003RSFLLG/TR
Avnet Americas Trans MOSFET N-CH 1KV 4A 3-Pin(2+Tab) D3PAK - Tape and Reel (Alt: APT1003RSFLLG/TR) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 49 Weeks, 0 Days Container: Reel 0
  • 1 $13.0300
  • 100 $11.2400
  • 250 $10.8100
  • 500 $10.5700
$10.5700 / $13.0300 Buy Now
DISTI # 494-APT1003RSFLLG
Mouser Electronics MOSFET FREDFET MOS7 1000 V 3 Ohm TO-268 RoHS: Compliant 46
  • 1 $11.9700
  • 100 $10.3500
$10.3500 / $11.9700 Buy Now
DISTI # APT1003RSFLLG
Microchip Technology Inc FREDFET MOS7 1000 V 3 Ohm TO-268, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $11.9700
  • 100 $10.3500
  • 250 $9.9400
  • 500 $9.7200
  • 1,000 $9.4800
  • 5,000 $9.1800
$9.1800 / $11.9700 Buy Now
Future Electronics 1000v,4a,3000mohm,TO-268 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $10.3400
  • 100 $10.2800
  • 150 $10.2500
  • 200 $10.2300
  • 250 $10.1500
$10.1500 / $10.3400 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 4A Continuous Drain (Id) @ 25°C - 3 Ohm @ 2A, 10V - TO-268-3 Package - Surface Mount. 223 Factory Stock
  • 5 $11.8000
  • 25 $10.6500
  • 50 $10.3600
  • 100 $9.9500
  • 250 $9.7000
  • 500 $9.5500
  • 1,000 $9.4100
$9.4100 / $11.8000 Buy Now
DISTI # APT1003RSFLLG
TME Transistor: N-MOSFET, unipolar, 1kV, 4A, Idm: 16A, 139W, D3PAK Min Qty: 1 0
  • 1 $17.4100
  • 3 $15.6000
  • 10 $13.7800
$13.7800 / $17.4100 RFQ
NAC FG, FREDFET, 1000V, D3, RoHS, TO-268 RoHS: Compliant Min Qty: 32 Package Multiple: 1 Container: Tube 0
  • 1 $11.4400
  • 100 $10.3700
  • 500 $9.7200
  • 1,000 $9.4900
$9.4900 / $11.4400 Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 4A Continuous Drain (Id) @ 25°C - 3 Ohm @ 2A, 10V - TO-268-3 Package - Surface Mount. 223 Factory Stock
  • 5 $11.8000
  • 25 $10.6500
  • 50 $10.3600
  • 100 $9.9500
  • 250 $9.7000
  • 500 $9.5500
  • 1,000 $9.4100
$9.4100 / $11.8000 Buy Now

Part Details for APT1003RSFLLG

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APT1003RSFLLG Part Data Attributes:

APT1003RSFLLG Microchip Technology Inc
Buy Now Datasheet
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APT1003RSFLLG Microchip Technology Inc Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description D2PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 49 Weeks
Avalanche Energy Rating (Eas) 425 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Pure Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT1003RSFLLG

This table gives cross-reference parts and alternative options found for APT1003RSFLLG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1003RSFLLG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT1003RBFLLG Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC Microchip Technology Inc APT1003RSFLLG vs APT1003RBFLLG
APT1003RKLLG Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Microchip Technology Inc APT1003RSFLLG vs APT1003RKLLG

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