Datasheets
APT10035JFLL by:
Advanced Power Technology
Advanced Power Technology
Microchip Technology Inc
Microsemi Corporation
Not Found

Power Field-Effect Transistor, 25A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

Part Details for APT10035JFLL by Advanced Power Technology

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APT10035JFLL Information

APT10035JFLL by Advanced Power Technology is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for APT10035JFLL

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APT10035JFLL Part Data Attributes

APT10035JFLL Advanced Power Technology
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APT10035JFLL Advanced Power Technology Power Field-Effect Transistor, 25A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description ISOTOP-4
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 520 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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