Part Details for APT10025JLC by Advanced Power Technology
Results Overview of APT10025JLC by Advanced Power Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
APT10025JLC Information
APT10025JLC by Advanced Power Technology is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for APT10025JLC
APT10025JLC CAD Models
APT10025JLC Part Data Attributes
|
|
APT10025JLC
Advanced Power Technology
Buy Now
Datasheet
|
Compare Parts:
APT10025JLC
Advanced Power Technology
Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 3600 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 136 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT10025JLC
This table gives cross-reference parts and alternative options found for APT10025JLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT10025JLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFE36N100 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 1000V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | APT10025JLC vs IXFE36N100 |
| IXFN40N110P | IXYS Corporation | $19.9460 | Power Field-Effect Transistor, 34A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | APT10025JLC vs IXFN40N110P |
| APT10026JNR | Microsemi Corporation | Check for Price | 33A, 1000V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET | APT10025JLC vs APT10026JNR |
| IXFN36N110P | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 36A I(D), 1100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | APT10025JLC vs IXFN36N110P |