Part Details for APT10025JLC by Advanced Power Technology
Overview of APT10025JLC by Advanced Power Technology
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- Number of FFF Equivalents:
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- Part Data Attributes
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Part Details for APT10025JLC
APT10025JLC CAD Models
APT10025JLC Part Data Attributes
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APT10025JLC
Advanced Power Technology
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Datasheet
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APT10025JLC
Advanced Power Technology
Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 3600 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 136 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for APT10025JLC
This table gives cross-reference parts and alternative options found for APT10025JLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT10025JLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFE36N100 | Power Field-Effect Transistor, 33A I(D), 1000V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | APT10025JLC vs IXFE36N100 |
| APT10026JNR | Power Field-Effect Transistor, 33A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Advanced Power Technology | APT10025JLC vs APT10026JNR |
| APT10025PVR | Power Field-Effect Transistor, 33A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOLATED PPACK-4 | Advanced Power Technology | APT10025JLC vs APT10025PVR |
| APT10025JFLC | Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | APT10025JLC vs APT10025JFLC |
| IXFN40N110P | Power Field-Effect Transistor, 34A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | APT10025JLC vs IXFN40N110P |
| APT10025JLC | 34A, 1000V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 | Microsemi Corporation | APT10025JLC vs APT10025JLC |