Datasheets
APT1001RSVRG by:
Microchip Technology Inc
Microchip Technology Inc
Microsemi Corporation
Not Found

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT1001RSVRG by Microchip Technology Inc

Results Overview of APT1001RSVRG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

APT1001RSVRG Information

APT1001RSVRG by Microchip Technology Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for APT1001RSVRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH5545
Newark Mosfet Mos5 1000 V 1 Ohm To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT1001RSVRG RoHS: Compliant Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $15.1400
  • 100 $13.0700
  • 250 $12.5700
  • 500 $12.2900
$12.2900 / $15.1400 Buy Now
DISTI # APT1001RSVRG-ND
DigiKey MOSFET N-CH 1000V 11A D3PAK Min Qty: 40 Lead time: 20 Weeks Container: Tube Temporarily Out of Stock
  • 40 $15.1400
$15.1400 Buy Now
DISTI # APT1001RSVRG
Avnet Americas Trans MOSFET N-CH 1KV 11A 3-Pin(2+Tab) D3PAK - Rail/Tube (Alt: APT1001RSVRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 40 $12.3760
  • 50 $12.1794
  • 90 $11.9828
  • 200 $11.7862
  • 400 $11.5896
$11.5896 / $12.3760 Buy Now
DISTI # 494-APT1001RSVRG
Mouser Electronics MOSFETs MOSFET MOS5 1000 V 1 Ohm TO-268 RoHS: Compliant 0
  • 1 $15.1400
  • 100 $13.0700
$13.0700 / $15.1400 Order Now
DISTI # APT1001RSVRG
Microchip Technology Inc MOSFET MOS 5 1000 V 1 Ohm TO-268, TO-268, Projected EOL: 2044-04-30 ECCN: EAR99 RoHS: Compliant Lead time: 20 Weeks, 0 Days Container: Tube 0

Alternates Available
  • 1 $15.1400
  • 100 $13.0700
  • 250 $12.5700
  • 500 $12.2900
  • 1,000 $12.0000
  • 5,000 $11.5900
$11.5900 / $15.1400 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 11A Continuous Drain (Id) @ 25°C - 1 Ohm @ 50... 0mA, 10V - TO-268-3 Package - Surface Mount. more RoHS: Compliant 0
  • 5 $14.6700
  • 25 $13.2800
  • 50 $12.9300
  • 100 $12.4400
  • 250 $12.1400
  • 500 $11.9500
  • 1,000 $11.7700
$11.7700 / $14.6700 Buy Now
DISTI # 84986852
Verical Trans MOSFET N-CH 1KV 11A 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant Min Qty: 3 Package Multiple: 1 Americas - 26
  • 3 $31.3768
  • 10 $26.9014
$26.9014 / $31.3768 Buy Now
DISTI # APT1001RSVRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 1kV, 11A, Idm: 44A Min Qty: 1 26
  • 1 $27.4000
  • 3 $24.6000
  • 10 $21.7000
$21.7000 / $27.4000 Buy Now
NAC FG, MOSFET, 1000V, 1.0_OHM, D3, TO-268, RoHS RoHS: Compliant Min Qty: 25 Package Multiple: 1 Container: Tube 0
  • 1 $14.4600
  • 100 $13.1100
  • 500 $12.2900
  • 1,000 $11.9900
$11.9900 / $14.4600 Buy Now
DISTI # APT1001RSVRG
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 40 0
  • 40 $13.5000
  • 50 $13.1500
  • 100 $12.9800
$12.9800 / $13.5000 Buy Now
DISTI # APT1001RSVRG
Avnet Silica Trans MOSFET NCH 1KV 11A 3Pin2Tab D3PAK (Alt: APT1001RSVRG) RoHS: Compliant Min Qty: 40 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT1001RSVRG
EBV Elektronik Trans MOSFET NCH 1KV 11A 3Pin2Tab D3PAK (Alt: APT1001RSVRG) RoHS: Compliant Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 1000 V - 11A Continuous Drain (Id) @ 25°C - 1 Ohm @ 50... 0mA, 10V - TO-268-3 Package - Surface Mount. more RoHS: Compliant 0
  • 5 $14.6700
  • 25 $13.2800
  • 50 $12.9300
  • 100 $12.4400
  • 250 $12.1400
  • 500 $11.9500
  • 1,000 $11.7700
$11.7700 / $14.6700 Buy Now

Part Details for APT1001RSVRG

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APT1001RSVRG Part Data Attributes

APT1001RSVRG Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT1001RSVRG Microchip Technology Inc Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description D3PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Microchip
Avalanche Energy Rating (Eas) 1210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Pure Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT1001RSVRG

This table gives cross-reference parts and alternative options found for APT1001RSVRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001RSVRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT1001RSVRG Microsemi Corporation Check for Price Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1001RSVRG vs APT1001RSVRG
SML100S11 TT Electronics Power and Hybrid / Semelab Limited Check for Price 11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 APT1001RSVRG vs SML100S11
Part Number Manufacturer Composite Price Description Compare
APT1001RSVR Microsemi Corporation Check for Price Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1001RSVRG vs APT1001RSVR
SML1001RSVR TT Electronics Resistors Check for Price Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1001RSVRG vs SML1001RSVR
SML1001RSVR TT Electronics Power and Hybrid / Semelab Limited Check for Price 11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 APT1001RSVRG vs SML1001RSVR
APT10090BFLLG Microchip Technology Inc $16.1656 Power Field-Effect Transistor, 12A I(D), 1000V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD APT1001RSVRG vs APT10090BFLLG
IXFT13N90 Littelfuse Inc Check for Price Power Field-Effect Transistor, 13A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN APT1001RSVRG vs IXFT13N90
APT10090SLLG Microsemi Corporation Check for Price Power Field-Effect Transistor, 12A I(D), 1000V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1001RSVRG vs APT10090SLLG
APT10078SFLLG Microsemi Corporation Check for Price Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1001RSVRG vs APT10078SFLLG
IXFK14N100Q IXYS Corporation Check for Price Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 APT1001RSVRG vs IXFK14N100Q
IXFV15N100P IXYS Corporation Check for Price Power Field-Effect Transistor, 15A I(D), 1000V, 0.76ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN APT1001RSVRG vs IXFV15N100P
SML100S11 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 APT1001RSVRG vs SML100S11

APT1001RSVRG Related Parts

APT1001RSVRG Frequently Asked Questions (FAQ)

  • Microchip recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines. Additionally, consider using thermal interface materials (TIMs) to improve heat transfer between the device and the heat sink or PCB. Operating the device within its specified temperature range and providing adequate cooling will also help ensure reliable operation.

  • Exceeding the maximum junction temperature (Tj) rating can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within its specified temperature range to maintain reliability and performance.

  • To troubleshoot OCP-related issues, start by verifying that the input voltage and current are within the specified limits. Check for any short circuits or excessive loads on the output. Ensure that the device is properly configured and that the OCP threshold is set correctly. If issues persist, consult the datasheet and application notes for further guidance.

  • To ensure EMI and EMC compliance, follow proper PCB layout and design guidelines, such as keeping sensitive analog traces away from noisy digital traces. Use shielding and filtering components as necessary, and ensure that the device is properly decoupled. Consult the datasheet and relevant industry standards (e.g., CISPR, FCC) for more information.