Datasheets
APL1001P by:

Power Field-Effect Transistor, 18A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, PPACK-4

Part Details for APL1001P by Advanced Power Technology

Overview of APL1001P by Advanced Power Technology

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for APL1001P

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APL1001P Part Data Attributes:

APL1001P Advanced Power Technology
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APL1001P Advanced Power Technology Power Field-Effect Transistor, 18A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, PPACK-4
Part Life Cycle Code Obsolete
Ihs Manufacturer ADVANCED POWER TECHNOLOGY INC
Package Description FLANGE MOUNT, R-CDFM-D4
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CDFM-D4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 520 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form SOLDER LUG
Terminal Position DUAL
Transistor Element Material SILICON

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