Part Details for APL1001J by Microchip Technology Inc
Overview of APL1001J by Microchip Technology Inc
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for APL1001J
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
494-APL1001J
|
Mouser Electronics | MOSFET Modules MOSFET Linear 1000 V 18 A SOT-227 RoHS: Compliant | 0 |
|
Order Now | |
DISTI #
APL1001J
|
Microchip Technology Inc | MOSFET Linear 1000 V 18 A SOT-227, Projected EOL: 2049-10-26 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
|
$40.2400 / $52.5100 | Buy Now |
|
Bristol Electronics | 40 |
|
RFQ | ||
|
Quest Components | 32 |
|
$123.3120 / $154.1400 | Buy Now | |
DISTI #
APL1001J
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
|
RFQ | |
DISTI #
APL1001J
|
Avnet Silica | Trans MOSFET N-CH 1KV 18A 4-Pin SOT-227 (Alt: APL1001J) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 24 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for APL1001J
APL1001J CAD Models
APL1001J Part Data Attributes
|
APL1001J
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
APL1001J
Microchip Technology Inc
Power Field-Effect Transistor, 18A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 520 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Element Material | SILICON |