Datasheets
AP4525GEM-HF by:
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Hongxing Electrical Ltd
Not Found

TRANSISTOR 40 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power

Part Details for AP4525GEM-HF by Advanced Power Electronics Corp

Results Overview of AP4525GEM-HF by Advanced Power Electronics Corp

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AP4525GEM-HF Information

AP4525GEM-HF by Advanced Power Electronics Corp is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for AP4525GEM-HF

AP4525GEM-HF CAD Models

AP4525GEM-HF Part Data Attributes

AP4525GEM-HF Advanced Power Electronics Corp
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AP4525GEM-HF Advanced Power Electronics Corp TRANSISTOR 40 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power
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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer ADVANCED POWER ELECTRONICS CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ADVANCED POWER ELECTRONICS CORP
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON