Datasheets
AP3988P-HF by: Advanced Power Electronics Corp

TRANSISTOR POWER, FET, FET General Purpose Power

Part Details for AP3988P-HF by Advanced Power Electronics Corp

Overview of AP3988P-HF by Advanced Power Electronics Corp

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Applications Automotive

Part Details for AP3988P-HF

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AP3988P-HF Part Data Attributes:

AP3988P-HF Advanced Power Electronics Corp
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AP3988P-HF Advanced Power Electronics Corp TRANSISTOR POWER, FET, FET General Purpose Power
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer ADVANCED POWER ELECTRONICS CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 40 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AP3988P-HF

This table gives cross-reference parts and alternative options found for AP3988P-HF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP3988P-HF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
10N60L-TQ2-T Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd AP3988P-HF vs 10N60L-TQ2-T
10N60G-TQ2-R Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd AP3988P-HF vs 10N60G-TQ2-R
10N60L-TA3-T Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Unisonic Technologies Co Ltd AP3988P-HF vs 10N60L-TA3-T
AP3989R-HF TRANSISTOR 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp AP3988P-HF vs AP3989R-HF
2SK3399 TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components AP3988P-HF vs 2SK3399
FMI11N60E Power Field-Effect Transistor, 11A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN Fuji Electric Co Ltd AP3988P-HF vs FMI11N60E
SSF10N60 Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Suzhou Good-Ark Electronics Co Ltd AP3988P-HF vs SSF10N60
10N60G-TA3-T Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Unisonic Technologies Co Ltd AP3988P-HF vs 10N60G-TA3-T
FQP12N60J69Z Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN Fairchild Semiconductor Corporation AP3988P-HF vs FQP12N60J69Z

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