Part Details for AP2309GN by Advanced Power Electronics Corp
Overview of AP2309GN by Advanced Power Electronics Corp
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AP2309GN
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | 3460 |
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RFQ |
Part Details for AP2309GN
AP2309GN CAD Models
AP2309GN Part Data Attributes:
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AP2309GN
Advanced Power Electronics Corp
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Datasheet
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AP2309GN
Advanced Power Electronics Corp
TRANSISTOR 3.7 A, 30 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.7 A | |
| Drain-source On Resistance-Max | 0.075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AP2309GN
This table gives cross-reference parts and alternative options found for AP2309GN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP2309GN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UTC654G-AG6-R | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-6 | Unisonic Technologies Co Ltd | AP2309GN vs UTC654G-AG6-R |
| AP2605GY-HF | TRANSISTOR 4 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6, FET General Purpose Power | Advanced Power Electronics Corp | AP2309GN vs AP2605GY-HF |
| PJA3405_R2_00001 | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.073ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | AP2309GN vs PJA3405_R2_00001 |
| AP2605GY0-HF | TRANSISTOR 4 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6, FET General Purpose Power | Advanced Power Electronics Corp | AP2309GN vs AP2605GY0-HF |
| AP2309GN-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | AP2309GN vs AP2309GN-HF |
| PJA3405_R1_00001 | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.073ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | AP2309GN vs PJA3405_R1_00001 |
| AP2605GY | TRANSISTOR 4 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-6, FET General Purpose Power | Advanced Power Electronics Corp | AP2309GN vs AP2605GY |
| PJA3405-AU_R1_000A1 | Power Field-Effect Transistor, | PanJit Semiconductor | AP2309GN vs PJA3405-AU_R1_000A1 |
| 2SJ608 | Power Field-Effect Transistor, 4A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLP-3 | SANYO Electric Co Ltd | AP2309GN vs 2SJ608 |
| UTC654L-AG6-R | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-6 | Unisonic Technologies Co Ltd | AP2309GN vs UTC654L-AG6-R |