Part Details for AP2309GN-HF by Advanced Power Electronics Corp
Overview of AP2309GN-HF by Advanced Power Electronics Corp
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AP2309GN-HF
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Simple Drive Requirement, Small Package Outline | 6000 |
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RFQ |
Part Details for AP2309GN-HF
AP2309GN-HF CAD Models
AP2309GN-HF Part Data Attributes:
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AP2309GN-HF
Advanced Power Electronics Corp
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Datasheet
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AP2309GN-HF
Advanced Power Electronics Corp
TRANSISTOR POWER, FET, FET General Purpose Power
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3.7 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AP2309GN-HF
This table gives cross-reference parts and alternative options found for AP2309GN-HF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP2309GN-HF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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UTC654G-AG6-R | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-6 | Unisonic Technologies Co Ltd | AP2309GN-HF vs UTC654G-AG6-R |
AP2605GY-HF | TRANSISTOR 4 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6, FET General Purpose Power | Advanced Power Electronics Corp | AP2309GN-HF vs AP2605GY-HF |
PJA3405_R2_00001 | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.073ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | AP2309GN-HF vs PJA3405_R2_00001 |
AP2605GY0-HF | TRANSISTOR 4 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6, FET General Purpose Power | Advanced Power Electronics Corp | AP2309GN-HF vs AP2605GY0-HF |
PJA3405_R1_00001 | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.073ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | PanJit Semiconductor | AP2309GN-HF vs PJA3405_R1_00001 |
AP2309GN | TRANSISTOR 3.7 A, 30 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | AP2309GN-HF vs AP2309GN |
AP2605GY | TRANSISTOR 4 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-6, FET General Purpose Power | Advanced Power Electronics Corp | AP2309GN-HF vs AP2605GY |
PJA3405-AU_R1_000A1 | Power Field-Effect Transistor, | PanJit Semiconductor | AP2309GN-HF vs PJA3405-AU_R1_000A1 |
2SJ608 | Power Field-Effect Transistor, 4A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLP-3 | SANYO Electric Co Ltd | AP2309GN-HF vs 2SJ608 |
UTC654L-AG6-R | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-6 | Unisonic Technologies Co Ltd | AP2309GN-HF vs UTC654L-AG6-R |