Part Details for AP1004CMX by Advanced Power Electronics Corp
Overview of AP1004CMX by Advanced Power Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for AP1004CMX
AP1004CMX CAD Models
AP1004CMX Part Data Attributes
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AP1004CMX
Advanced Power Electronics Corp
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Datasheet
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AP1004CMX
Advanced Power Electronics Corp
TRANSISTOR 32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE, GREENFET PACKAGE-3, FET General Purpose Power
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Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
Package Description | CHIP CARRIER, R-XBCC-N3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 28.8 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 32 A | |
Drain-source On Resistance-Max | 0.0018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 250 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AP1004CMX
This table gives cross-reference parts and alternative options found for AP1004CMX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP1004CMX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDMS2508SDC | N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM, 3000/TAPE REEL | Fairchild Semiconductor Corporation | AP1004CMX vs FDMS2508SDC |
BSC014NE2LSIATMA1 | Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | AP1004CMX vs BSC014NE2LSIATMA1 |
BSC014NE2LSI | Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | AP1004CMX vs BSC014NE2LSI |
BSB013NE2LXI | Power Field-Effect Transistor, 36A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, METAL, WDSON-3 | Infineon Technologies AG | AP1004CMX vs BSB013NE2LXI |
BSB013NE2LXIXUMA1 | Power Field-Effect Transistor, 36A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-3 | Infineon Technologies AG | AP1004CMX vs BSB013NE2LXIXUMA1 |