Part Details for AP04N70BI-H-HF by Advanced Power Electronics Corp
Overview of AP04N70BI-H-HF by Advanced Power Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for AP04N70BI-H-HF
AP04N70BI-H-HF CAD Models
AP04N70BI-H-HF Part Data Attributes
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AP04N70BI-H-HF
Advanced Power Electronics Corp
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Datasheet
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AP04N70BI-H-HF
Advanced Power Electronics Corp
TRANSISTOR 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 8 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 700 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 2.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AP04N70BI-H-HF
This table gives cross-reference parts and alternative options found for AP04N70BI-H-HF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP04N70BI-H-HF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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AP04N70BI | TRANSISTOR 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | AP04N70BI-H-HF vs AP04N70BI |
PJF4NA65_T0_00001 | Power Field-Effect Transistor, 4A I(D), 650V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220AB-F, 3 PIN | PanJit Semiconductor | AP04N70BI-H-HF vs PJF4NA65_T0_00001 |
TSM4N60CIC0 | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, ITO-220, 3 PIN | Taiwan Semiconductor | AP04N70BI-H-HF vs TSM4N60CIC0 |
AP04N70BI-HF | TRANSISTOR POWER, FET, FET General Purpose Power | Advanced Power Electronics Corp | AP04N70BI-H-HF vs AP04N70BI-HF |
KF4N60F | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220IS, 3 PIN | KEC | AP04N70BI-H-HF vs KF4N60F |
4N60G-TF1-T | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | AP04N70BI-H-HF vs 4N60G-TF1-T |
4N60L-TF1-T | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | AP04N70BI-H-HF vs 4N60L-TF1-T |
4N65G-TF3-T | Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | AP04N70BI-H-HF vs 4N65G-TF3-T |
PJP4NA60_T0_00001 | Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | PanJit Semiconductor | AP04N70BI-H-HF vs PJP4NA60_T0_00001 |
SSRF04N65SL-C | Power Field-Effect Transistor, 4A I(D), 650V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, ITO-220, 3 PIN | Secos Corporation | AP04N70BI-H-HF vs SSRF04N65SL-C |