Part Details for AOTF15S60L by Alpha & Omega Semiconductor
Results Overview of AOTF15S60L by Alpha & Omega Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AOTF15S60L Information
AOTF15S60L by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOTF15S60L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1518-5-ND
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DigiKey | MOSFET N-CH 600V 15A TO220-3F Min Qty: 1 Lead time: 16 Weeks Container: Tube |
444 In Stock |
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$1.1250 / $3.4900 | Buy Now |
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DISTI #
AOTF15S60L
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
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$1.3700 / $2.3100 | RFQ |
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LCSC | 600V 15A 290m10V7.5A 27.8W 3.8V 1 N-channel TO-220F MOSFETs ROHS | 3 |
|
$3.6667 / $3.8989 | Buy Now |
Part Details for AOTF15S60L
AOTF15S60L CAD Models
AOTF15S60L Part Data Attributes
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AOTF15S60L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | TO-220F, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Avalanche Energy Rating (Eas) | 173 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.3 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 27.8 W | |
| Power Dissipation-Max (Abs) | 27.8 W | |
| Pulsed Drain Current-Max (IDM) | 63 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 108 ns | |
| Turn-on Time-Max (ton) | 46.5 ns |
AOTF15S60L Frequently Asked Questions (FAQ)
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The maximum junction temperature of the AOTF15S60L is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the heat sink should be mounted with a thermal interface material (TIM) to minimize thermal resistance.
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The recommended gate drive voltage for the AOTF15S60L is between 10V and 15V. However, the gate drive voltage should be adjusted based on the specific application and switching frequency.
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Yes, the AOTF15S60L can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the gate drive signals are properly synchronized and the devices are matched for optimal performance.
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A low-inductance PCB layout is recommended for the AOTF15S60L. This can be achieved by using a compact layout, minimizing the length of the power traces, and using a solid ground plane.