Part Details for AOTF12T60P by Alpha & Omega Semiconductor
Overview of AOTF12T60P by Alpha & Omega Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AOTF12T60P
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | MOSFET N-CH 600V 12A TO220F | 6000 |
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RFQ |
Part Details for AOTF12T60P
AOTF12T60P CAD Models
AOTF12T60P Part Data Attributes
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AOTF12T60P
Alpha & Omega Semiconductor
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Datasheet
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AOTF12T60P
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 12A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 750 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.52 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AOTF12T60P
This table gives cross-reference parts and alternative options found for AOTF12T60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOTF12T60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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KF12N60P | Power Field-Effect Transistor, 12A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | KEC | AOTF12T60P vs KF12N60P |
FMI13N60E | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN | Fuji Electric Co Ltd | AOTF12T60P vs FMI13N60E |
FMP13N60ES | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | AOTF12T60P vs FMP13N60ES |
STB13NK60ZT4 | N-channel 600 V, 0.48 Ohm typ., 13 A SuperMesh Power MOSFET in D2PAK package | STMicroelectronics | AOTF12T60P vs STB13NK60ZT4 |
FMI13N60ES | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN | Fuji Electric Co Ltd | AOTF12T60P vs FMI13N60ES |
FMP13N60E | Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Fuji Electric Co Ltd | AOTF12T60P vs FMP13N60E |
STB13NK60Z | 13A, 600V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | AOTF12T60P vs STB13NK60Z |