Datasheets
AOTF12T60P by:

Power Field-Effect Transistor, 12A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Part Details for AOTF12T60P by Alpha & Omega Semiconductor

Overview of AOTF12T60P by Alpha & Omega Semiconductor

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Applications Energy and Power Systems Renewable Energy

Price & Stock for AOTF12T60P

Part # Distributor Description Stock Price Buy
Chip1Cloud MOSFET N-CH 600V 12A TO220F 6000
RFQ

Part Details for AOTF12T60P

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AOTF12T60P Part Data Attributes

AOTF12T60P Alpha & Omega Semiconductor
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AOTF12T60P Alpha & Omega Semiconductor Power Field-Effect Transistor, 12A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 750 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.52 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 48 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AOTF12T60P

This table gives cross-reference parts and alternative options found for AOTF12T60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOTF12T60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
KF12N60P Power Field-Effect Transistor, 12A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN KEC AOTF12T60P vs KF12N60P
FMI13N60E Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN Fuji Electric Co Ltd AOTF12T60P vs FMI13N60E
FMP13N60ES Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fuji Electric Co Ltd AOTF12T60P vs FMP13N60ES
STB13NK60ZT4 N-channel 600 V, 0.48 Ohm typ., 13 A SuperMesh Power MOSFET in D2PAK package STMicroelectronics AOTF12T60P vs STB13NK60ZT4
FMI13N60ES Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(L), 3 PIN Fuji Electric Co Ltd AOTF12T60P vs FMI13N60ES
FMP13N60E Power Field-Effect Transistor, 13A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN Fuji Electric Co Ltd AOTF12T60P vs FMP13N60E
STB13NK60Z 13A, 600V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics AOTF12T60P vs STB13NK60Z

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