Datasheets
AOTF10N65 by: Alpha & Omega Semiconductor

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for AOTF10N65 by Alpha & Omega Semiconductor

Overview of AOTF10N65 by Alpha & Omega Semiconductor

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for AOTF10N65

Part # Distributor Description Stock Price Buy
DISTI # AOTF10N65-ND
DigiKey MOSFET N-CH 650V 10A TO220-3F Min Qty: 1000 Lead time: 16 Weeks Container: Tube Limited Supply - Call
  • 1,000 $0.7127
$0.7127 Buy Now
DISTI # AOTF10N65
TME Transistor: N-MOSFET, unipolar, 650V, 6.2A, TO220F Min Qty: 1 621
  • 1 $1.2100
  • 5 $1.0800
  • 25 $0.9500
  • 100 $0.8700
  • 500 $0.8000
$0.8000 / $1.2100 Buy Now

Part Details for AOTF10N65

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AOTF10N65 Part Data Attributes:

AOTF10N65 Alpha & Omega Semiconductor
Buy Now Datasheet
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AOTF10N65 Alpha & Omega Semiconductor Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Configuration SINGLE
Drain Current-Max (ID) 10 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Surface Mount NO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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