Part Details for AOT20N60L by Alpha & Omega Semiconductor
Overview of AOT20N60L by Alpha & Omega Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for AOT20N60L
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1512-5-ND
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DigiKey | MOSFET N-CH 600V 20A TO220 Min Qty: 1000 Lead time: 18 Weeks Container: Tube | Limited Supply - Call |
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$1.3999 | Buy Now |
DISTI #
V36:1790_07841307
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Arrow Electronics | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 1227 | Americas - 1 |
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$1.1590 | Buy Now |
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Chip1Cloud | MOSFET N-CH 600V 20A TO220 / Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 T/R | 34500 |
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RFQ |
Part Details for AOT20N60L
AOT20N60L CAD Models
AOT20N60L Part Data Attributes
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AOT20N60L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOT20N60L
Alpha & Omega Semiconductor
Transistor
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Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 1260 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.37 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 35 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 417 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |