Part Details for AOT20N25L by Alpha & Omega Semiconductor
Overview of AOT20N25L by Alpha & Omega Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for AOT20N25L
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1588-5-ND
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DigiKey | MOSFET N-CH 250V 20A TO220 Min Qty: 1000 Lead time: 18 Weeks Container: Tube | Limited Supply - Call |
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$0.6122 | Buy Now |
DISTI #
AOT20N25L
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TME | Transistor: N-MOSFET, unipolar, 250V, 14A, 208W, TO220 Min Qty: 1 | 0 |
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$0.7100 / $1.0700 | RFQ |
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ComSIT USA | N-CHANNEL MOSFET Power Field-Effect Transistor, 20A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 1000 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 250V 20A TO220 | 77100 |
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RFQ |
Part Details for AOT20N25L
AOT20N25L CAD Models
AOT20N25L Part Data Attributes
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AOT20N25L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOT20N25L
Alpha & Omega Semiconductor
Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 608 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.17 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 11 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 208 W | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |