Part Details for AOT1608L by Alpha & Omega Semiconductor
Results Overview of AOT1608L by Alpha & Omega Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AOT1608L Information
AOT1608L by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOT1608L
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1412-5-ND
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DigiKey | MOSFET N-CH 60V 11A/140A TO220 Min Qty: 1000 Lead time: 18 Weeks Container: Tube | Limited Supply - Call |
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$0.6857 | Buy Now |
DISTI #
AOT1608L
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TME | Transistor: N-MOSFET, unipolar, 60V, 100A, 166W, TO220 Min Qty: 1 | 158 |
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$0.8100 / $1.2300 | Buy Now |
Part Details for AOT1608L
AOT1608L CAD Models
AOT1608L Part Data Attributes
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AOT1608L
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | TO-220, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Alpha & Omega Semiconductors | |
Avalanche Energy Rating (Eas) | 638 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.0076 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 80 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 333 W | |
Pulsed Drain Current-Max (IDM) | 256 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |