Datasheets
AOT12N65 by: Alpha & Omega Semiconductor

Transistor

Part Details for AOT12N65 by Alpha & Omega Semiconductor

Overview of AOT12N65 by Alpha & Omega Semiconductor

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Applications Automotive

Part Details for AOT12N65

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AOT12N65 Part Data Attributes

AOT12N65 Alpha & Omega Semiconductor
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AOT12N65 Alpha & Omega Semiconductor Transistor
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 750 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.72 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 18 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 278 W
Pulsed Drain Current-Max (IDM) 48 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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