Part Details for AOT11S60 by Alpha & Omega Semiconductor
Results Overview of AOT11S60 by Alpha & Omega Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
AOT11S60 Information
AOT11S60 by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for AOT11S60
AOT11S60 CAD Models
AOT11S60 Part Data Attributes
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AOT11S60
Alpha & Omega Semiconductor
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Datasheet
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AOT11S60
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.399 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 178 W | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AOT11S60
This table gives cross-reference parts and alternative options found for AOT11S60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOT11S60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AOI11S60 | Alpha & Omega Semiconductor | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251A, GREEN, IPAK-3 | AOT11S60 vs AOI11S60 |
| SPI11N60S5HKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | AOT11S60 vs SPI11N60S5HKSA1 |
| SPP11N60C3XK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | AOT11S60 vs SPP11N60C3XK |
| SPB11N60S5E3045 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | AOT11S60 vs SPB11N60S5E3045 |
| SSF11NS65 | Suzhou Good-Ark Electronics Co Ltd | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | AOT11S60 vs SSF11NS65 |
| SPB11N60C3ATMA1 | Infineon Technologies AG | $1.4879 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | AOT11S60 vs SPB11N60C3ATMA1 |
| Q67040-S4396 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | AOT11S60 vs Q67040-S4396 |
| SIHB12N60E-GE3 | Vishay Intertechnologies | $1.5988 | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | AOT11S60 vs SIHB12N60E-GE3 |
| SPB11N60S5-E6327 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | AOT11S60 vs SPB11N60S5-E6327 |
| STB12NM60N | STMicroelectronics | Check for Price | 10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | AOT11S60 vs STB12NM60N |