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Part Details for AOSP21357 by Alpha & Omega Semiconductor
Overview of AOSP21357 by Alpha & Omega Semiconductor
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for AOSP21357
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
785-AOSP21357CT-ND
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DigiKey | MOSFET P-CH 30V 16A 8SOIC Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2214 In Stock |
|
$0.4400 / $1.4100 | Buy Now |
|
DISTI #
AOSP21357
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TME | Transistor: P-MOSFET, unipolar, -30V, -12.5A, 2W, SO8 Min Qty: 1 | 690 |
|
$0.2360 / $0.7610 | Buy Now |
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CHIPMALL.COM LIMITED | 30V 16A 8.5m��@16A,10V 3.1W 2.3V@250uA P Channel SO-8 MOSFETs ROHS | 3380 |
|
$0.3815 / $0.5142 | Buy Now |
|
|
LCSC | 30V 16A 8.5m16A10V 3.1W 2.3V250uA 1 Piece P-Channel SO-8 MOSFETs ROHS | 2785 |
|
$0.2703 / $0.3643 | Buy Now |
Part Details for AOSP21357
AOSP21357 CAD Models
AOSP21357 Part Data Attributes
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AOSP21357
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOSP21357
Alpha & Omega Semiconductor
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2020-02-10 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Avalanche Energy Rating (Eas) | 76 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.1 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |