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Part Details for AON6294 by Alpha & Omega Semiconductor
Overview of AON6294 by Alpha & Omega Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for AON6294
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
785-1667-1-ND
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DigiKey | MOSFET N-CH 100V 17A/52A 8DFN Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
113231 In Stock |
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$0.6600 / $1.1100 | Buy Now |
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Bristol Electronics | 3336 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 52A I(D), 100V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 850 |
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$0.6188 / $1.4850 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 52A I(D), 100V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2668 |
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$1.5000 / $4.0000 | Buy Now |
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DISTI #
AON6294
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TME | Transistor: N-MOSFET, unipolar, 100V, 33A, 57W, DFN5x6 Min Qty: 1 | 0 |
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$0.5310 / $0.8020 | RFQ |
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Chip1Cloud | MOSFET N-CH 100V 17A 8DFN | 128900 |
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RFQ |
Part Details for AON6294
AON6294 CAD Models
AON6294 Part Data Attributes
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AON6294
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AON6294
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 52A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, DFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |