Part Details for AOI7N60 by Alpha & Omega Semiconductor
Results Overview of AOI7N60 by Alpha & Omega Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AOI7N60 Information
AOI7N60 by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AOI7N60
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1452-5-ND
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DigiKey | MOSFET N-CH 600V 7A TO251A Min Qty: 3500 Lead time: 16 Weeks Container: Tube | Limited Supply - Call |
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$0.4058 | Buy Now |
Part Details for AOI7N60
AOI7N60 CAD Models
AOI7N60 Part Data Attributes
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AOI7N60
Alpha & Omega Semiconductor
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Datasheet
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 388 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 1.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 11 pF | |
JEDEC-95 Code | TO-251A | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -50 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 178 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |