Datasheets
AOI4184 by: Alpha & Omega Semiconductor

Power Field-Effect Transistor, 50A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3

Part Details for AOI4184 by Alpha & Omega Semiconductor

Overview of AOI4184 by Alpha & Omega Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for AOI4184

Part # Distributor Description Stock Price Buy
DISTI # AOI4184-ND
DigiKey MOSFET N-CH 40V 12A/50A TO251A Min Qty: 3500 Lead time: 16 Weeks Container: Tube Temporarily Out of Stock
  • 3,500 $0.2719
$0.2719 Buy Now
DISTI # AOI4184
TME Transistor: N-MOSFET, unipolar, 40V, 40A, 25W, TO251A Min Qty: 1 195
  • 1 $1.0690
  • 10 $0.4880
  • 70 $0.4310
  • 140 $0.3870
  • 490 $0.3610
$0.3610 / $1.0690 Buy Now

Part Details for AOI4184

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AOI4184 Part Data Attributes

AOI4184 Alpha & Omega Semiconductor
Buy Now Datasheet
Compare Parts:
AOI4184 Alpha & Omega Semiconductor Power Field-Effect Transistor, 50A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, TO-251A, IPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Part Package Code TO-251
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Avalanche Energy Rating (Eas) 61 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for AOI4184

This table gives cross-reference parts and alternative options found for AOI4184. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOI4184, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD088N04LGBTMA1 Power Field-Effect Transistor, 47A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG AOI4184 vs IPD088N04LGBTMA1
IPD50N04S309ATMA1 Power Field-Effect Transistor, 50A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG AOI4184 vs IPD50N04S309ATMA1
NVMYS8D0N04CTWG Power MOSFET 40 V, 8.0 mΩ, 48 A, Single N-Channel, LFPAK-4, 3000-REEL, Automotive Qualified onsemi AOI4184 vs NVMYS8D0N04CTWG
IPD50N04S3-09 Power Field-Effect Transistor, 50A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG AOI4184 vs IPD50N04S3-09

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