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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1096-1-ND
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DigiKey | MOSFET 2N-CH 20V 7A 8TSSOP Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Limited Supply - Call |
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$0.2537 / $0.7700 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 7A I(D), 20V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 168 |
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$2.7103 / $4.3950 | Buy Now |
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NexGen Digital | 574 |
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RFQ | ||
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Sense Electronic Company Limited | TSSOP8 | 917 |
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RFQ | |
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Win Source Electronics | Trans MOSFET N-CH 20V 7A 8-Pin TSSOP / MOSFET 2N-CH 20V 7A 8-TSSOP | 149877 |
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$0.2330 / $0.3500 | Buy Now |
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AO8810
Alpha & Omega Semiconductor
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Datasheet
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AO8810
Alpha & Omega Semiconductor
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | TSSOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Alpha & Omega Semiconductors | |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.0205 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |