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Transistor
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1041-1-ND
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DigiKey | MOSFET N/P-CH 60V 4.5A 8SOIC Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
50555 In Stock |
|
$0.2825 / $1.0000 | Buy Now |
DISTI #
E02:0323_03035111
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Arrow Electronics | Trans MOSFET N/P-CH 60V 4.5A/3.2A 8-Pin SOIC RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Date Code: 2423 | Europe - 21000 |
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$0.2790 / $0.3005 | Buy Now |
DISTI #
V72:2272_07841841
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Arrow Electronics | Trans MOSFET N/P-CH 60V 4.5A/3.2A 8-Pin SOIC RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2223 Container: Cut Strips | Americas - 662 |
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$0.3033 / $0.5366 | Buy Now |
DISTI #
83603282
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Verical | Trans MOSFET N/P-CH 60V 4.5A/3.2A 8-Pin SOIC RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2423 | Americas - 21000 |
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$0.2846 / $0.3065 | Buy Now |
DISTI #
65213139
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Verical | Trans MOSFET N/P-CH 60V 4.5A/3.2A 8-Pin SOIC RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 2223 | Americas - 662 |
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$0.3033 / $0.4516 | Buy Now |
DISTI #
AO4612
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TME | Transistor: N/P-MOSFET, unipolar, complementary pair, 60/-60V Min Qty: 1 | 2786 |
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$0.2910 / $0.7550 | Buy Now |
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ComSIT USA | 60V Complementary Enhancement Mode Field Effect Transistor Power Field-Effect Transistor, 4.5A I(D), 60V, 0.056ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant |
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RFQ | |
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Win Source Electronics | MOSFET N/P-CH 60V 8-SOIC | 39220 |
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$0.2830 / $0.4240 | Buy Now |
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AO4612
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AO4612
Alpha & Omega Semiconductor
Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Package Description | SOIC-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Alpha & Omega Semiconductors | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.056 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 25 pF | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation Ambient-Max | 2 W | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 28 ns | |
Turn-on Time-Max (ton) | 11.5 ns |