Datasheets
AO4438 by: Alpha & Omega Semiconductor

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for AO4438 by Alpha & Omega Semiconductor

Results Overview of AO4438 by Alpha & Omega Semiconductor

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AO4438 Information

AO4438 by Alpha & Omega Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AO4438

Part # Distributor Description Stock Price Buy
Chip 1 Exchange INSTOCK 499
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Part Details for AO4438

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AO4438 Part Data Attributes

AO4438 Alpha & Omega Semiconductor
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AO4438 Alpha & Omega Semiconductor Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ALPHA & OMEGA SEMICONDUCTOR LTD
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Alpha & Omega Semiconductors
Configuration SINGLE
Drain Current-Max (ID) 8.2 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Surface Mount YES

AO4438 Related Parts

AO4438 Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the AO4438 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.

  • To ensure proper biasing, connect the gate-source voltage (Vgs) to a voltage source that is within the recommended range of 2V to 4V. Also, ensure the drain-source voltage (Vds) is within the recommended range of 10V to 30V.

  • To minimize thermal resistance, use a PCB layout with a large copper area connected to the drain pin (D) and a thermal via connecting the drain pin to a heat sink or a thermal pad. This helps to dissipate heat efficiently.

  • Yes, the AO4438 is suitable for high-frequency switching applications up to 1MHz. However, ensure that the gate drive circuitry is designed to provide a fast rise and fall time to minimize switching losses.

  • Use a voltage regulator or a voltage clamp to limit the voltage across the drain-source pins. Additionally, use a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.