Datasheets
ALF16N20K by:

Power Field-Effect Transistor, 16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, METAL PACKAGE-2

Part Details for ALF16N20K by TT Electronics Resistors

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for ALF16N20K

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ALF16N20K Part Data Attributes

ALF16N20K TT Electronics Resistors
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ALF16N20K TT Electronics Resistors Power Field-Effect Transistor, 16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, METAL PACKAGE-2
Part Life Cycle Code Obsolete
Ihs Manufacturer TT ELECTRONICS PLC
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH VOLTAGE
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 16 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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