Part Details for AJT006 by Advanced Semiconductor Inc
Overview of AJT006 by Advanced Semiconductor Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for AJT006
AJT006 CAD Models
AJT006 Part Data Attributes:
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AJT006
Advanced Semiconductor Inc
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Datasheet
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AJT006
Advanced Semiconductor Inc
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.310 INCH, FM-2
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.9 A | |
Collector-Emitter Voltage-Max | 32 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 30 | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 250 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 25 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for AJT006
This table gives cross-reference parts and alternative options found for AJT006. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AJT006, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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AJT030 | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, FM-2 | Advanced Semiconductor Inc | AJT006 vs AJT030 |
MS2209 | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC SEALED, 2NFL, S042, 4 PIN | Microsemi Corporation | AJT006 vs MS2209 |
MRF10031 | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETIC SEALED, CASE 376B-02, 2 PIN | MACOM | AJT006 vs MRF10031 |
MZ0912B50YTRAY | TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, METAL CERAMIC PACKAGE-2, BIP RF Power | NXP Semiconductors | AJT006 vs MZ0912B50YTRAY |
MRF10005 | TRANSISTOR,BJT,NPN,1.25MA I(C),RFMOD | TE Connectivity | AJT006 vs MRF10005 |
PH0912-35 | L BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | TE Connectivity | AJT006 vs PH0912-35 |