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Transistors / IGBTs / AIKP20N60CTAKSA1
Datasheets
AIKP20N60CTAKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for AIKP20N60CTAKSA1 by Infineon Technologies AG

Results Overview of AIKP20N60CTAKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

AIKP20N60CTAKSA1 Information

AIKP20N60CTAKSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AIKP20N60CTAKSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-AIKP20N60CTAKSA1-ND
DigiKey IGBT TRENCH FS 600V 40A TO220-3 Min Qty: 160 Lead time: 10 Weeks Container: Bulk MARKETPLACE PRODUCT 23130
In Stock
  • 160 $1.8800
$1.8800 Buy Now
DISTI # 448-AIKP20N60CTAKSA1-ND
DigiKey IGBT TRENCH FS 600V 40A TO220-3 Min Qty: 160 Lead time: 10 Weeks Container: Tube Temporarily Out of Stock
  • 500 $1.8903
$1.8903 Buy Now
DISTI # AIKP20N60CTAKSA1
Avnet Americas Infineon's Discrete IGBT TRENCHSTOP?and Fieldstop 600V Automotive 3-Pin TO-263 - Rail/Tube (Alt: AIK... P20N60CTAKSA1) more RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 500 $1.8071
$1.8071 Buy Now
DISTI # 726-AIKP20N60CTAKSA1
Mouser Electronics IGBTs DISCRETES RoHS: Compliant 0
  • 500 $1.8900
  • 1,000 $1.8800
  • 2,500 $1.8100
$1.8100 / $1.8900 Order Now
Rochester Electronics AIKP20N60 - Discrete Switches RoHS: Compliant Status: Active Min Qty: 1 23130
  • 1 $1.8100
  • 25 $1.7700
  • 100 $1.7000
  • 500 $1.6300
  • 1,000 $1.5400
$1.5400 / $1.8100 Buy Now
DISTI # AIKP20N60CTAKSA1
TME Transistor: IGBT, 600V, 20A, 156W, TO220-3 Min Qty: 1 375
  • 1 $3.9900
  • 3 $3.5300
  • 10 $3.1700
  • 50 $2.9500
  • 250 $2.7500
$2.7500 / $3.9900 Buy Now
DISTI # SP001346802
EBV Elektronik Infineons Discrete IGBT TRENCHSTOPand Fieldstop 600V Automotive 3Pin TO263 (Alt: SP001346802) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 20025
RFQ

Part Details for AIKP20N60CTAKSA1

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AIKP20N60CTAKSA1 Part Data Attributes

Parametric Data
AIKP20N60CTAKSA1 Infineon Technologies AG
Buy Now Datasheet
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AIKP20N60CTAKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 287 ns
Turn-on Time-Nom (ton) 35 ns
VCEsat-Max 2.05 V

AIKP20N60CTAKSA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the AIKP20N60CTAKSA1 is -55°C to 175°C, as specified in the datasheet. However, it's essential to consider the derating curves for power dissipation and junction temperature to ensure reliable operation.

  • To ensure the VGS is within the recommended range, use a gate driver IC or a voltage regulator to provide a stable voltage supply. Additionally, consider the voltage tolerance and noise immunity of the gate driver circuit to prevent unwanted switching or damage to the MOSFET.

  • For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the MOSFET and the heat sink. Keep the PCB layout compact, and use a symmetrical layout to minimize parasitic inductance and capacitance. Also, consider using thermal vias and a heat sink with a thermal interface material (TIM) to improve heat dissipation.

  • The AIKP20N60CTAKSA1 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the MOSFET's switching characteristics, such as the rise and fall times, and ensure that the gate driver circuit is capable of providing a fast switching signal. Additionally, be mindful of the MOSFET's parasitic capacitances and inductances, which can affect high-frequency performance.

  • To protect the MOSFET from overvoltage and overcurrent conditions, use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the MOSFET. Additionally, consider using a current sense resistor and a comparator or an overcurrent protection IC to detect and respond to overcurrent conditions. Implementing a fuse or a circuit breaker can also provide an additional layer of protection.