Datasheets
AGR09180EU by:

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SURFACE MOUNT PACKAGE-4

Part Details for AGR09180EU by Avago Technologies

Overview of AGR09180EU by Avago Technologies

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Part Details for AGR09180EU

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AGR09180EU Part Data Attributes

AGR09180EU Avago Technologies
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AGR09180EU Avago Technologies 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SURFACE MOUNT PACKAGE-4
Part Life Cycle Code Active
Ihs Manufacturer AVAGO TECHNOLOGIES INC
Package Description FLATPACK, R-CDFP-F4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFP-F4
JESD-609 Code e0
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for AGR09180EU

This table gives cross-reference parts and alternative options found for AGR09180EU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AGR09180EU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AGR09180EU RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-4 Broadcom Limited AGR09180EU vs AGR09180EU
Part Number Description Manufacturer Compare
AGR09180EU RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-4 Broadcom Limited AGR09180EU vs AGR09180EU
AGR09180EF RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 LSI Corporation AGR09180EU vs AGR09180EF
AGR09180EF RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET TriQuint Semiconductor AGR09180EU vs AGR09180EF
AGR09180EU RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-4 LSI Corporation AGR09180EU vs AGR09180EU

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