-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
RF POWER, FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
44X7192
|
Newark | Airfast Rf Power Ldmos Transistor, 720-960 Mhz, 100 W Avg., 48 V/ Reel Rohs Compliant: Yes |Nxp AFV09P350-04NR3 Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$75.8800 | Buy Now |
DISTI #
AFV09P350-04NR3-ND
|
DigiKey | RF MOSFET LDMOS 48V OM780-4 Min Qty: 250 Lead time: 10 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$77.8316 | Buy Now |
DISTI #
AFV09P350-04NR3
|
Avnet Americas | Transistor RF FET N-CH 105V 720MHz to 960MHz 4-Pin OM-780 T/R - Tape and Reel (Alt: AFV09P350-04NR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$73.5044 / $84.7671 | Buy Now |
DISTI #
841-AFV09P350-04NR3
|
Mouser Electronics | RF MOSFET Transistors 720-960 MHz 100 W AVG. 48 V RoHS: Compliant | 250 |
|
$76.1100 / $92.7900 | Buy Now |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 250 Package Multiple: 250 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$72.2900 | Buy Now |
DISTI #
AFV09P350-04NR3
|
Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 250 | 0 |
|
$79.3500 | Buy Now |
DISTI #
AFV09P350-04NR3
|
Avnet Silica | Transistor RF FET N-CH 105V 720MHz to 960MHz 4-Pin OM-780 T/R (Alt: AFV09P350-04NR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 12 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
Chip1Cloud | FET RF 2CH 105V 920MHZ OM780-4 / Trans RF MOSFET N-CH 105V 5-Pin OM-780 EP T/R | 1030 |
|
RFQ | |
DISTI #
AFV09P350-04NR3
|
EBV Elektronik | Transistor RF FET N-CH 105V 720MHz to 960MHz 4-Pin OM-780 T/R (Alt: AFV09P350-04NR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 12 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
AFV09P350-04NR3
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
AFV09P350-04NR3
NXP Semiconductors
RF POWER, FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | NXP | |
Configuration | SEPARATE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 105 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDFP-F4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 18.5 dB | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |